Could the Pollack effect make possible liquid metal analogs of semiconductors?

Could the Pollack effect allow us to build effective Ga semiconductors and even transistor-like elements? Electrons and holes are essential for semiconductors. In n (p) type regions electrons doping is by atoms for which the number of valence electrons is larger (smaller) than atoms or molecules considered. In p type regions, doping is by atoms for which the number of valence electrons is smaller. Ga(OH)₃, which is in gel phase, is an excellent candidate for the semiconductor of this kind.

Pollack effect creating O^-+ dark proton from OH creates negatively charged exclusion zones (EZs). The delocalization of the negative charges of O^- ions as conduction electrons could give rise to an analog of n doping. In the presence of electric fields , these electrons can be removed from the EZ.

The dropping of the dark protons back to ordinary protons giving rise to O⁺ ions would give rise to p-type doping. In the case of water this would create OH₃⁺ ions responsible for the pH of water. This might give rise to np type junction and one can even imagine analogs of npn and pnp type transistors. These transistors would be dynamical and the ordinary bits and OH-O^-+ p qubits would be very closely related.

See the article Could computers be living and move? or the chapter Quartz crystals as a life form and ordinary computers as an interface between quartz life and ordinary life?.

For a summary of earlier postings see Latest progress in TGD.

For the lists of articles (most of them published in journals founded by Huping Hu) and books about TGD see this.